Title :
A method of quantitative defect analysis and yield forecast by an advanced kill rate from line monitoring data
Author :
Kikuchi, Hiroaki ; Nishio, Naoharu
Author_Institution :
ULSI Device Div. Labs., NEC Corp., Sagamihara, Japan
Abstract :
This paper presents a method for quantitative defect analysis and yield forecast by using a new kill rate from line monitoring data. This kill rate is based on the average of kill rates from dice with the same numbers of the same type of defect occurrences on a die. A simulation study indicated that this new method is superior to conventional methods for multiple defect occurrences on a die
Keywords :
circuit analysis computing; data analysis; failure analysis; fault simulation; integrated circuit yield; process monitoring; semiconductor process modelling; average die kill rates; defect occurrences; kill rate; line monitoring data; multiple defect occurrences; quantitative defect analysis; simulation; yield forecast; Circuit simulation; Data analysis; Inspection; Integrated circuit yield; Laboratories; Monitoring; National electric code; Testing; Ultra large scale integration; Yield estimation;
Conference_Titel :
Statistical Metrology, 1999. IWSM. 1999 4th International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-5154-1
DOI :
10.1109/IWSTM.1999.773188
