Ultra-thin compound semiconductor on insulator (XOI) for MOSFETs and TFETs

Due to their high electron mobility, III-V semiconductors are promising channel materials for future devices. InAs is one such promising material; however, due to the small bandgap (Eg~0.36 eV) bulk devices are not feasible. In addition, heteroepitaxial growth of thin layers on Si is challenging due to the inherent lattice mismatch. Here, we present a platform developed for integration of single-crystalline ultra-thin compound semiconductor layers on insulator (XOI), resembling the conventional SOI substrates.