A study of within-wafer non-uniformity metrics

Author

Smith, Taber ; Boning, Duane ; Fang, Simon ; Shinn, Greg ; Stefani, Jeny

Author_Institution

Microsyst. Technol. Lab., MIT, Cambridge, MA, USA

fYear

1999

fDate

1999

Firstpage

46

Lastpage

49

Abstract

This work reconsiders within-wafer nonuniformity (WIWNU) metrics for semiconductor processes. Simulations of typical chemical-mechanical polishing (CMP) scenarios are used to demonstrate that these metrics may vary with the pre-process thickness profile, the removal rate characteristics, and processing time. These metrics are compared and contrasted. Some of these metrics are shown to be biased with processing time, while others are shown to be insensitive to improvements in WIWNU. Finally, experimental data is compared with these simulations. It is suggested that multiple metrics may be necessary to determine the actual characteristics of a process

Keywords

chemical mechanical polishing; integrated circuit measurement; semiconductor process modelling; CMP scenarios; WIWNU metrics; chemical-mechanical polishing; metrics; metrics comparison; multiple metrics; pre-process thickness profile; process characteristics; processing time; processing time-biased metrics; removal rate characteristics; semiconductor processes; simulations; within-wafer nonuniformity metrics; Chemical processes; Electronics industry; Instruments; Measurement standards; Monitoring; Sampling methods; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Statistical Metrology, 1999. IWSM. 1999 4th International Workshop on

Conference_Location

Kyoto

Print_ISBN

0-7803-5154-1

Type

conf

DOI

10.1109/IWSTM.1999.773193

Filename

773193