Plasma doping and plasma-less doping for SI: application to the sub-quarter micron surface channel PMOSFET and solid plasma source application for safety operation

Summary form only given. Ultrashallow doping profiles are required for manufacturing sub-quarter micron CMOS LSI in the 21st century. Several methods have been proposed. They are plasma doping (PD), plasma immersion ion implantation (PIII) and high temperature rapid vapor doping (RVD). The plasma doping method (PD and PIII) has been considered as one of the most promising candidates for obtaining ultrashallow doping profiles, because of its low energy, high throughput, room temperature operation and lower machine cost. In this paper, we show that plasma doping can be applied to 0.17 /spl mu/m Surface Channel (SC)-PMOSFET and vapor doping can be also successfully performed under room temperature conditions with plasma pre-treatment. We call the latter method, room temperature vapor doping (RTVD). The very shallow depth profiles of the samples doped with PD using gas and solid source and RTVD are confirmed. Typical electrical characteristics of SC-PMOSFET made by the se methods are compared. The PD method with very high throughput can alternate with low energy ion implantation technology in the near future, and RTVD will be the candidate for achieving much shallower doping profiles with very high throughput.