DocumentCode
2902103
Title
Strain Effects on Heterojunction Phototransistor Performance
Author
Ghisoni, M.
fYear
1996
fDate
8-13 Sept. 1996
Firstpage
296
Lastpage
296
Keywords
Capacitive sensors; Degradation; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Lattices; Microwave technology; Optical saturation; Phototransistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-optics Europe, 1996. CLEO/Europe., Conference on
Conference_Location
Hamburg, Germany
Print_ISBN
0-7803-3169-9
Type
conf
DOI
10.1109/CLEOE.1996.562514
Filename
562514
Link To Document