DocumentCode :
2902103
Title :
Strain Effects on Heterojunction Phototransistor Performance
Author :
Ghisoni, M.
fYear :
1996
fDate :
8-13 Sept. 1996
Firstpage :
296
Lastpage :
296
Keywords :
Capacitive sensors; Degradation; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Lattices; Microwave technology; Optical saturation; Phototransistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-optics Europe, 1996. CLEO/Europe., Conference on
Conference_Location :
Hamburg, Germany
Print_ISBN :
0-7803-3169-9
Type :
conf
DOI :
10.1109/CLEOE.1996.562514
Filename :
562514
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2902103
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