• DocumentCode
    2902217
  • Title

    High performance N- and P-type gate-all-around nanowire MOSFETs fabricated on bulk Si by CMOS-compatible process

  • Author

    Song, Yi ; Zhou, Huajie ; Xu, Qiuxia ; Luo, Jun ; Zhao, Chao ; Liang, Qingqing

  • Author_Institution
    Key Lab. of Microelectron. Devices & Integrated Technol., Chinese Acad. of Sci., Beijing, China
  • fYear
    2011
  • fDate
    20-22 June 2011
  • Firstpage
    83
  • Lastpage
    84
  • Abstract
    We demonstrate high performance silicon nanowire gate-all-around MOSFETs (SNWFETs) fabricated on bulk Si by a novel top-down CMOS-compatible method. The fabricated N- and P-type SNWFETs of sub-50 nm gate length and of ~5 nm in diameter show excellent short channel effects (SCEs) immunity with subthreshold slope (SS) of 90/69 mV/dec, DIBL of 47/10 mV/V, and high driving current of 2×103/5.4×103 μA/μm at 0.1 nA/μm off-current.
  • Keywords
    CMOS integrated circuits; MOSFET; nanowires; silicon; CMOS compatible process; SNWFET; Si; gate all around nanowire MOSFET; short channel effect; Fabrication; FinFETs; Logic gates; Oxidation; Rain; Substrates; CMOS; bulk substrate; gate-all-around; nanowire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2011 69th Annual
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-61284-243-1
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2011.5994423
  • Filename
    5994423
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2902217