Title :
High performance N- and P-type gate-all-around nanowire MOSFETs fabricated on bulk Si by CMOS-compatible process
Author :
Song, Yi ; Zhou, Huajie ; Xu, Qiuxia ; Luo, Jun ; Zhao, Chao ; Liang, Qingqing
Author_Institution :
Key Lab. of Microelectron. Devices & Integrated Technol., Chinese Acad. of Sci., Beijing, China
Abstract :
We demonstrate high performance silicon nanowire gate-all-around MOSFETs (SNWFETs) fabricated on bulk Si by a novel top-down CMOS-compatible method. The fabricated N- and P-type SNWFETs of sub-50 nm gate length and of ~5 nm in diameter show excellent short channel effects (SCEs) immunity with subthreshold slope (SS) of 90/69 mV/dec, DIBL of 47/10 mV/V, and high driving current of 2×103/5.4×103 μA/μm at 0.1 nA/μm off-current.
Keywords :
CMOS integrated circuits; MOSFET; nanowires; silicon; CMOS compatible process; SNWFET; Si; gate all around nanowire MOSFET; short channel effect; Fabrication; FinFETs; Logic gates; Oxidation; Rain; Substrates; CMOS; bulk substrate; gate-all-around; nanowire;
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2011.5994423
