Ka-band AlGaAs/InGaAs PHEMT monolithic low-noise amplifier

Author

Chen, Xiaojian ; Liu, Jun ; Wang, Junxian

Author_Institution

Nanjing Electron. Devices Inst., China

fYear

1996

fDate

12-15 Aug 1996

Firstpage

47

Lastpage

50

Abstract

The PHEMT MMIC LNA has been developed at Ka-band by using an optimized HEMT MMIC process and MBE δ-doped AlGaAs/InGaAs wafer. The PHEMT modeling small signal parameters have been successfully used in MMIC CAD and the full-wave EM analysis has been adopted for MMIC layout design. The resulted single- and two-stage MMICs have the performances: NF of 2.9 dB with gain of 4.5 dB at 30.5 GHz (single-stage) and NF of 4.8 dB with gain of 9.5 dB at 34.8 GHz (two-stage)

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; circuit CAD; doping profiles; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit layout; integrated circuit noise; millimetre wave amplifiers; molecular beam epitaxial growth; 2.9 dB; 30.5 GHz; 34.8 GHz; 4.5 dB; 4.8 dB; 9.5 dB; AlGaAs-InGaAs; Ka-band; MBE δ-doped AlGaAs-InGaAs wafer; MMIC CAD; MMIC layout design; PHEMT monolithic LNA; full-wave EM analysis; monolithic low-noise amplifier; optimized HEMT MMIC process; single-stage MMIC; two-stage MMIC; Design automation; HEMTs; Indium gallium arsenide; Low-noise amplifiers; MMICs; Noise measurement; PHEMTs; Performance gain; Semiconductor device modeling; Signal analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Millimeter Wave and Far Infrared Science and Technology, 1996. Proceedings., 4TH International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3619-4

Type

conf

DOI

10.1109/ICMWFT.1996.574697

Filename

574697