Title :
“Zero” drain-current drift of inversion-mode NMOSFET on InP (111)A surface
Author :
Wang, Chen ; Xu, Min ; Colby, Robert ; Stach, Eric A. ; Ye, Peide D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
In this paper, we report on "zero" drain-current drift on InP (111)A MOSFETs which is a major issue to prevent commercializing InP MOSFET technology on (100) surface in 1980s.
Keywords :
III-V semiconductors; MOSFET; indium compounds; interface states; semiconductor-insulator boundaries; Fermi level; InP; MOSCAP; charge-neutrality-level; crystalline surfaces; high-k dielectric; interfacial chemistry; inversion-mode NMOSFET; quantum well transistor; zero drain-current drift; MOSFET circuits; Stress;
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2011.5994430
