Title :
Ambipolar nano-crystalline-silicon TFTs with submicron dimensions and reduced threshold voltage shift
Author :
Subramaniam, Anand ; Cantley, Kurtis D. ; Chapman, Richard A. ; Chakrabarti, Bhaswar ; Vogel, Eric M.
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas at Dallas, Richardson, TX, USA
Abstract :
Hydrogenated nano-crystalline-silicon (nc-Si) thin-film transistors (TFTs) are primary candidates for use in neuromorphic circuits and systems. Such devices can be fabricated at low temperatures and over large areas, allowing cheap processing and three-dimensional integration with CMOS structures. The major drawbacks of nc-Si TFTs include low carrier mobility, threshold voltage (Vτ) shift under bias stress and lack of p-channel operation due to unintentional n-type doping by oxygen impurity present in the nc-Si layer. We have fabricated nc-Si TFTs that minimize all the above drawbacks, and are thus well suited for use in neuromorphic applications.
Keywords :
CMOS integrated circuits; carrier mobility; elemental semiconductors; hydrogenation; impurities; nanostructured materials; silicon; thin film transistors; CMOS structures; Si; ambipolar nanocrystalline-silicon TFT; bias stress; carrier mobility; hydrogenated nanocrystalline-silicon thin film transistors; neuromorphic applications; neuromorphic circuits; neuromorphic systems; oxygen impurity; p-channel operation; submicron dimensions; three-dimensional integration; threshold voltage shift; unintentional n-type doping; Logic gates; Neuromorphics; Oxygen; Radio frequency; X-ray scattering;
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2011.5994433