• DocumentCode
    2902420
  • Title

    Monolithically grown InxGa1−xAs nanowire on silicon tandem solar cells with high efficiency

  • Author

    Shin, Jae Cheol ; Kim, Kyou Hyun ; Hu, Hefei ; Yu, Ki Jun ; Rogers, John A. ; Jian-Min Zuo ; Li, Xiuling

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
  • fYear
    2011
  • fDate
    20-22 June 2011
  • Firstpage
    101
  • Lastpage
    102
  • Abstract
    In summary, the direct 1D heteroepitaxy of ternary InXGa1-xAs NWs in a wide composition/bandgap range reported here enables monolithic tandem solar cells on Si substrate. Further improvement in energy conversion efficiency is expected due to the direct bandgap, enhanced light trapping, as well as bandgap and current matching by composition, doping, and height engineering.
  • Keywords
    III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; nanowires; semiconductor quantum wires; silicon; solar cells; InXGa1-xAs; Si; current matching; direct 1D heteroepitaxy; direct bandgap; energy conversion efficiency; height engineering; light trapping; monolithic tandem solar cells; monolithically grown nanowire; silicon tandem solar cells; ternary nanowires; Photonic band gap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2011 69th Annual
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-61284-243-1
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2011.5994434
  • Filename
    5994434
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2902420