DocumentCode :
2902420
Title :
Monolithically grown InxGa1−xAs nanowire on silicon tandem solar cells with high efficiency
Author :
Shin, Jae Cheol ; Kim, Kyou Hyun ; Hu, Hefei ; Yu, Ki Jun ; Rogers, John A. ; Jian-Min Zuo ; Li, Xiuling
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
fYear :
2011
fDate :
20-22 June 2011
Firstpage :
101
Lastpage :
102
Abstract :
In summary, the direct 1D heteroepitaxy of ternary InXGa1-xAs NWs in a wide composition/bandgap range reported here enables monolithic tandem solar cells on Si substrate. Further improvement in energy conversion efficiency is expected due to the direct bandgap, enhanced light trapping, as well as bandgap and current matching by composition, doping, and height engineering.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; nanowires; semiconductor quantum wires; silicon; solar cells; InXGa1-xAs; Si; current matching; direct 1D heteroepitaxy; direct bandgap; energy conversion efficiency; height engineering; light trapping; monolithic tandem solar cells; monolithically grown nanowire; silicon tandem solar cells; ternary nanowires; Photonic band gap;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
ISSN :
1548-3770
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2011.5994434
Filename :
5994434
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2902420
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