Creating dynamic nanowire devices using wrapped gates

In this work, the authors utilize InP nanowires to investigate how a wrapped gate may be used to tune the Fermi level across the bandgap of the semiconductor. The authors have previously demonstrated long-channel InP NW FETs in which it was possible to tune the Fermi level with efficiency near the thermal limit. This was done using laterally placed, omega-gated p- and n-type NWs, where the n-type devices exhibited a subthreshold slope below 70 mV/dec and the p-type devices showed ambipolar behavior.