DocumentCode :
2902767
Title :
Transport properties of CVD-grown graphene nanoribbon field-effect transistors
Author :
Lyons, Austin S. ; Behnam, Ashkan ; Chow, Edmond K. ; Pop, Eric
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
fYear :
2011
fDate :
20-22 June 2011
Firstpage :
129
Lastpage :
130
Abstract :
This work represents the first demonstration of GNR FETs using CVD-grown graphene, a key step towards large-scale integration. CVD GNRs are comparable to the best state-of-the-art GNRs obtained by other methods, and can support current densities up to ~3 mA/μm. Presenting data from 22 samples, this work also serves to identify key future challenges, such as device variability.
Keywords :
chemical vapour deposition; current density; graphene; large scale integration; organic field effect transistors; C; CVD-grown graphene; GNR FET; current densities; graphene nanoribbon field-effect transistors; large-scale integration; transport properties; Electric breakdown; FETs; Gold;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
ISSN :
1548-3770
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2011.5994450
Filename :
5994450
Link To Document :
بازگشت