Scaling behavior and velocity enhancement in self-aligned N-polar GaN/AlGaN HEMTs with maximum fT of 163 GHz

N-polar GaN/AlGaN HEMTs have recently been demonstrated as a potential technology for high frequency applications. Excellent f_T.L_G product of 16.8 GHz-μm has been achieved for L_G = 130 nm. As the devices are being scaled to further improve the performance, vertical scaling and hence, aspect ratio of the device becomes an important aspect of the device design. In this paper, we analyze self-aligned devices with varying gate-lengths fabricated on a 10 nm GaN channel with identical access regions to understand the effect of aspect ratio on the scaling of DC and RF device performance with gate-length scaling.