Title :
Fermi-level pinning at metal/antimonides interface and demonstration of antimonides-based metal S/D Schottky pMOSFETs
Author :
Yuan, Z. ; Nainani, A. ; Lin, J.Y. ; Bennett, B.R. ; Boos, J.B. ; Ancona, M.G. ; Saraswat, K.C.
Author_Institution :
Dept. Of Elec. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
In this paper, we study the metal contact to antimonides compound. Good metal contact formed on p-type material and current suppression on n-type samples is attributed to the Fermi-level pinning at metal/antimonide interface and charge-neutral level being near the valence band edge. Schottky-barrier S/D p-MOSFETs is proposed and experimentally demonstrated which combines an InxGa1-xSb channel for good hole transport with metal S/D for low access resistance.
Keywords :
Fermi level; III-V semiconductors; MOSFET; Schottky gate field effect transistors; gallium compounds; indium compounds; valence bands; Fermi-level pinning; InxGa1-xSb; access resistance; antimonides compound; antimonides-based metal S/D Schottky pMOSFET; charge-neutral level; current suppression; hole transport; metal contact; metal/antimonides interface; n-type samples; p-type material; valence band edge; Annealing; Artificial intelligence; MOSFET circuits; MOSFETs; Ohmic contacts; Temperature measurement;
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2011.5994457
