DocumentCode :
2902888
Title :
Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs
Author :
Najmzadeh, Mohammad ; Bouvet, Didier ; Grabinski, Wladek ; Ionescu, Adrian M.
Author_Institution :
Nanoelectronic Devices Lab., Swiss Fed. Inst. of Technol. (EPFL), Lausanne, Switzerland
fYear :
2011
fDate :
20-22 June 2011
Firstpage :
145
Lastpage :
146
Abstract :
In this work we report an experimental study on accumulation-mode (AM) gate-all-around (GAA) nMOSFETs based on silicon nanowires with uniaxial tensile strain. Their electrical characteristics are studied from room temperature up to ~400 K and carrier mobility, flat-band and threshold voltages are extracted and investigated.
Keywords :
MOSFET; carrier mobility; elemental semiconductors; nanowires; silicon; Si; carrier mobility; flat-band; threshold voltages; uniaxially tensile strained accumulation-mode gate-all-around nanowire nMOSFET; FETs; Logic gates; Nanoscale devices; Silicon; Tensile strain; Threshold voltage; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
ISSN :
1548-3770
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2011.5994458
Filename :
5994458
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2902888
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