DocumentCode :
2903010
Title :
Voltage-controlled spin-wave-based logic gate
Author :
Liu, Tianyu ; Vignale, Giovanni
Author_Institution :
Dept. of Phys. & Astron., Univ. of Missouri, Columbia, MO, USA
fYear :
2011
fDate :
20-22 June 2011
Firstpage :
63
Lastpage :
64
Abstract :
Spin wave spintronics (also known as magnonics) processes information by propagating spin waves with no charge displaced. Because dissipation is thus minimized this is rapidly becoming an important subject of research within the larger area of spintronics. The logic states in magnonic circuitry can be defined either by the phase or by the amplitude of the spin wave. In both cases, a π-phase shifter plays a crucial role in performing logical operations. The first spin wave logic gate was experimentally demonstrated by Kostylev et al. They utilized an inhomogeneous magnetic field to control the phase difference between spin waves propagating in different arms of a Mach-Zehnder interferometer -and thus the amplitude of the output spin wave. Later, Schneider et al and Lee et al developed a complete set of logic gates such as NOR, XOR and AND, based on spin wave interferometry. However, all of theses gates are controlled by a current-induced magnetic field. As the devices shrink down, π-phase shift requires a larger electric current to induce stronger magnetic field, which inevitably increases the power-loss. Therefore, voltage-controlled spin wave electronics becomes an attractive alternative avenue towards nano-scale magnonics, where exchange spin waves are of primary interest.
Keywords :
Mach-Zehnder interferometers; logic gates; magnetic fields; magnetoelectronics; phase shifters; spin waves; voltage control; π-phase shifter; AND; Mach-Zehnder interferometer; NOR; XOR; current-induced magnetic field; electric current; inhomogeneous magnetic field; magnonic circuitry; nanoscale magnonics; spin wave interferometry; spin wave logic gate; spin wave spintronics; voltage control; Conductors; Couplings; Logic gates; Mach-Zehnder interferometers; Magnetization; Magnetoelectronics; Saturation magnetization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
ISSN :
1548-3770
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2011.5994464
Filename :
5994464
Link To Document :
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