Title :
Die Bonding Process Research for SOI Membrane Pressure Sensor
Author_Institution :
Suzhou Univ. of Sci. & Technol., Suzhou
Abstract :
Silicon pressure sensors which are based on piezoresistive effect are in use for many fields, because of their high performance and productivity. However, when work environment temperature is over 125degC, silicon piezoresistive pressure sensors have not been used because of worse temperature performance. SOI piezoresistor pressure chip has better temperature performance than silicon pressure sensor and has evidence advantage in aspects of resisting temperature, radiation and corrosion. The SOI pressure sensor of beam-diaphragm packaging structure which can resist high temperature of 250degC has been developed and its packaging process is analyzed in the paper.
Keywords :
bonding processes; electronics packaging; piezoresistive devices; pressure sensors; silicon-on-insulator; SOI membrane pressure sensor; SOI piezoresistor pressure chip; beam-diaphragm packaging structure; die bonding process; piezoresistive effect; piezoresistive pressure sensors; silicon pressure sensors; temperature 250 C; Biomembranes; Corrosion; Microassembly; Packaging; Productivity; Resists; Silicon; Stress; Temperature measurement; Temperature sensors;
Conference_Titel :
Electronic Packaging Technology, 2007. ICEPT 2007. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1392-8
Electronic_ISBN :
978-1-4244-1392-8
DOI :
10.1109/ICEPT.2007.4441396