• DocumentCode
    2903104
  • Title

    Electrical measurement of the spin Hall effects in Fe/InxGa1−xAs heterostructures

  • Author

    Garlid, E.S. ; Hu, Q.O. ; Geppert, C. ; Chan, M.K. ; Palmstrom, C.J. ; Crowell, P.A.

  • Author_Institution
    Sch. of Phys. & Astron., Univ. of Minnesota, Minneapolis, MN, USA
  • fYear
    2011
  • fDate
    20-22 June 2011
  • Firstpage
    155
  • Lastpage
    158
  • Abstract
    There has been extensive theoretical discussion of the spin Hall effect (SHE) and the various ways that it could be exploited to generate or manipulate spin currents. However, only a handful of recent experiments have investigated this effect, and in semiconductor materials they have relied on optical techniques to either detect or generate spins.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; iron; semiconductor-metal boundaries; spin Hall effect; Fe-InxGa1-xAs; electrical properties; heterostructures; optical method; semiconductor materials; spin Hall effects; spin currents; spin generation; Artificial neural networks; Gallium arsenide; Iron; Magnetic semiconductors; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2011 69th Annual
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-61284-243-1
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2011.5994468
  • Filename
    5994468
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2903104