Title :
Electrical measurement of the spin Hall effects in Fe/InxGa1−xAs heterostructures
Author :
Garlid, E.S. ; Hu, Q.O. ; Geppert, C. ; Chan, M.K. ; Palmstrom, C.J. ; Crowell, P.A.
Author_Institution :
Sch. of Phys. & Astron., Univ. of Minnesota, Minneapolis, MN, USA
Abstract :
There has been extensive theoretical discussion of the spin Hall effect (SHE) and the various ways that it could be exploited to generate or manipulate spin currents. However, only a handful of recent experiments have investigated this effect, and in semiconductor materials they have relied on optical techniques to either detect or generate spins.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; iron; semiconductor-metal boundaries; spin Hall effect; Fe-InxGa1-xAs; electrical properties; heterostructures; optical method; semiconductor materials; spin Hall effects; spin currents; spin generation; Artificial neural networks; Gallium arsenide; Iron; Magnetic semiconductors; Temperature dependence;
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2011.5994468
