• DocumentCode
    2903117
  • Title

    Simultaneous spin and charge transport in gated Si devices

  • Author

    Li, Jing ; Appelbaum, Ian

  • Author_Institution
    Dept. of Phys., Univ. of Maryland, College Park, MD, USA
  • fYear
    2011
  • fDate
    20-22 June 2011
  • Firstpage
    159
  • Lastpage
    160
  • Abstract
    In this work, lateral spin-transport devices employing ballistic hot-electron injection and detection methods are used to study temperature-dependent spin and charge transport controlled by an electrostatic back gate using native oxide (SiO2) insulator.
  • Keywords
    charge exchange; elemental semiconductors; hot carriers; monolithic integrated circuits; silicon; spin polarised transport; Si; ballistic hot-electron injection; detection methods; electrostatic back gate; gated Si devices; lateral spin-transport devices; native oxide insulator; temperature-dependent spin and charge transport; Clocks;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2011 69th Annual
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-61284-243-1
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2011.5994469
  • Filename
    5994469
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2903117