Title :
Scalable highly-anisotropic reactive ion etch on Si for nanophotonics
Author :
Liang, Eih-Zhe ; Lin, Ching-Fuh
Author_Institution :
Graduate Inst. of Electro-opt. Eng., Nat. Taiwan Univ., Taipei
Abstract :
In this work, we demonstrate both scalability down to decanometer and high anisotropy up to 90% in fabrication of Si nanostructure by reactive ion etching. Silicon nanorods with 20 nm diameter size are fabricated on single-crystalline silicon surface
Keywords :
elemental semiconductors; nanostructured materials; nanotechnology; optical fabrication; optical materials; sputter etching; 20 nm; Si; reactive ion etching; silicon nanorod fabrication; single-crystalline silicon surface; Anisotropic magnetoresistance; Etching; Nanoparticles; Nanophotonics; Nanostructures; Scalability; Shape; Silicon compounds; Sulfur hexafluoride; Tunneling;
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Conference_Location :
Munich
Print_ISBN :
0-7803-8974-3
DOI :
10.1109/CLEOE.2005.1568381
