Spin-torque switchable perpendicular magnetic junctions for solid-state memory

Author

Sun, J.Z. ; Robertazzi, R.P. ; Nowak, J.J. ; Trouilloud, P.L. ; Hu, G. ; Gaidis, M.C. ; Brown, S.L. ; Abraham, D.W. ; Sullivan, E. J O ; Gallagher, W.J. ; Worledge, D.C. ; Kent, Alexander D.

Author_Institution

T.J. Watson Res. Center, IBM-MagIC MRAM Dev. Alliance, IBM, Yorktown Heights, NY, USA

fYear

2011

fDate

20-22 June 2011

Firstpage

171

Lastpage

174

Abstract

Spin-torque switchable junctions are the leading candidates for future generations of magnetic random-access memory (MRAM) technologie. Earlier, spin-valves with perpendicular magnetic anisotropy (PMA) were shown to lower the switching threshold current, consistent with spin torque switching dynamics. Recently, MgO-based magnetic tunnel junctions (MTJs) were developed to have fully PMA states, improving switching speed and margin. The authors review the essential device properties of some such PMA junctions.

Keywords

magnesium compounds; magnetic tunnelling; perpendicular magnetic anisotropy; random-access storage; spin valves; MgO; magnetic random-access memory; magnetic tunnel junctions; perpendicular magnetic anisotropy; solid-state memory; spin torque switchable junctions; spin-valves; switchable perpendicular magnetic junctions; switching threshold current; Current measurement; Frequency measurement; Lead; Semiconductor device measurement; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2011 69th Annual

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-61284-243-1

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2011.5994475

Filename

5994475