Title :
An Enhanced SRAM BISR Design with Reduced Timing Penalty
Author :
Denq, Li-Ming ; Wang, Tzu-Chiang ; Wu, Cheng-Wen
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu
Abstract :
Redundancy repair is an effective yield-enhancement technique for memories. There are many previously proposed repair methodologies, such as the popular repair methodology based on the concept of address remapping mechanism achieved by address comparison and address reconfiguration. However, a BISR design with a typical address remapping mechanism usually involves significant timing penalty. Therefore, we propose a new address remapping scheme with a write buffer to reduce the timing penalty. Our experiments show that with the proposed address remapping scheme and redundancy architecture, the timing penalty of our BISR scheme is the same with that of the built-in self-test (BIST) circuit-only one multiplexer delay for both the inputs and outputs
Keywords :
SRAM chips; built-in self test; integrated circuit testing; integrated circuit yield; SRAM chips; address comparison; address reconfiguration; address remapping; built-in self-test; redundancy repair; timing penalty; write buffer; yield enhancement; Built-in self-test; Chemical elements; Circuit faults; Delay; Multiplexing; Random access memory; Redundancy; Registers; Testing; Timing;
Conference_Titel :
Test Symposium, 2006. ATS '06. 15th Asian
Conference_Location :
Fukuoka
Print_ISBN :
0-7695-2628-4
DOI :
10.1109/ATS.2006.260988