• DocumentCode
    2903421
  • Title

    Investigation of clusters of layered semiconductors prepared by laser ablation

  • Author

    Galak, M. ; Yeschenko, O. ; Dmitruk, I. ; Romanyuk, V. ; Kasuya, A.

  • Author_Institution
    Dept. of Phys., Nat. Taras Shevchenko Univ. of Kyiv
  • fYear
    2005
  • fDate
    17-17 June 2005
  • Firstpage
    614
  • Lastpage
    614
  • Abstract
    The aim of the research presented is to investigate cluster formation under pulsed laser ablation of layered semiconductors. Rapid evaporation of material provoked by high intensity laser beam creates favorable conditions for cluster formation. Films consisting of HgI2 and PbI2 nanoparticles (NP) have been prepared by pulsed N2 laser ablation. Photoetching technique was used to decrease number of large particles. There is a good agreement of theoretical prediction and observed peaks in mass spectra
  • Keywords
    etching; laser ablation; laser beams; lead compounds; mass spectra; mercury compounds; nanoparticles; nitrogen; HgI2; N2; PbI2; cluster formation; high intensity laser beam; laser ablation; layered semiconductor; mass spectra; nanoparticle; photoetching technique; rapid evaporation; Atomic measurements; Composite materials; Laser ablation; Laser beams; Nanoparticles; Optical materials; Optical pulses; Semiconductor lasers; Semiconductor materials; Stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
  • Conference_Location
    Munich
  • Print_ISBN
    0-7803-8974-3
  • Type

    conf

  • DOI
    10.1109/CLEOE.2005.1568390
  • Filename
    1568390
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2903421