DocumentCode
2903422
Title
Lateral gate suspended-body carbon nanotube field-effect-transistors with sub-100nm air gap by precise positioning method
Author
Cao, Ji ; Ionescu, Adrian M.
Author_Institution
Nanoelectronic Devices Lab. (Nanolab), Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland
fYear
2011
fDate
20-22 June 2011
Firstpage
189
Lastpage
190
Abstract
We report, for the first time, a self-aligned lateral gate suspended-body CNTFET with sub-lOOnm air gap fabricated by an improved precise positioning method.. The superior I-V characteristics of the lateral gate CNT FET are experimentally studied. The proposed suspended-body CNTFETs hold promise for bottom-up fabrication of resonant NEMS devices for sensing and RF applications.
Keywords
air gaps; carbon nanotubes; field effect transistors; nanoelectromechanical devices; air gap; lateral gate suspended-body carbon nanotube field-effect-transistors; precise positioning method; resonant NEMS devices; CNTFETs; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2011 69th Annual
Conference_Location
Santa Barbara, CA
ISSN
1548-3770
Print_ISBN
978-1-61284-243-1
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2011.5994482
Filename
5994482
Link To Document