• DocumentCode
    2903503
  • Title

    The latest performance of GaN-based nonpolar and semipolar emitting devices

  • Author

    Nakamura, Shuji

  • Author_Institution
    Mater. Dept., Univ. of California Santa Barbara, Santa Barbara, CA, USA
  • fYear
    2011
  • fDate
    20-22 June 2011
  • Firstpage
    9
  • Lastpage
    10
  • Abstract
    Here, the latest performance of nonpolar/semipolar LEDs and LDs is described. The authors fabricated LEDs from violet to yellow color region. Conventionally there have been no efficient green LEDs and, as a result no green LDs, which are called as a green gap. The semipolar (20-21) plain was good in green region of LEDs and LDs to fill out the green gap. The performance of semipolar green LEDs was relatively good in comparison with commercially available polar green LEDs. Thus, we succeeded in fabricating green LDs with an emission wavelength of 516 nm at UCSB. Other groups such as Sumitomo Electric Inc. and Soraa Inc. also succeeded in fabricating green LDs with an emission wavelength of 520-530 nm with an output power of about 50 mW using non-polar plains. These promising results indicate a big advantage of nonpolar/semipolar plains to make higher efficient LDs from UV to red color range.
  • Keywords
    III-V semiconductors; gallium compounds; light emitting diodes; semiconductor lasers; wide band gap semiconductors; GaN; Soraa Inc; Sumitomo Electric Inc; green gap; laser diodes; nonpolar emitting devices; nonpolar/semipolar LED; semipolar emitting devices; semipolar plain; violet color region; wavelength 516 nm; wavelength 520 nm to 530 nm; yellow color region; Radiative recombination;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2011 69th Annual
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-61284-243-1
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2011.5994487
  • Filename
    5994487