DocumentCode
2903503
Title
The latest performance of GaN-based nonpolar and semipolar emitting devices
Author
Nakamura, Shuji
Author_Institution
Mater. Dept., Univ. of California Santa Barbara, Santa Barbara, CA, USA
fYear
2011
fDate
20-22 June 2011
Firstpage
9
Lastpage
10
Abstract
Here, the latest performance of nonpolar/semipolar LEDs and LDs is described. The authors fabricated LEDs from violet to yellow color region. Conventionally there have been no efficient green LEDs and, as a result no green LDs, which are called as a green gap. The semipolar (20-21) plain was good in green region of LEDs and LDs to fill out the green gap. The performance of semipolar green LEDs was relatively good in comparison with commercially available polar green LEDs. Thus, we succeeded in fabricating green LDs with an emission wavelength of 516 nm at UCSB. Other groups such as Sumitomo Electric Inc. and Soraa Inc. also succeeded in fabricating green LDs with an emission wavelength of 520-530 nm with an output power of about 50 mW using non-polar plains. These promising results indicate a big advantage of nonpolar/semipolar plains to make higher efficient LDs from UV to red color range.
Keywords
III-V semiconductors; gallium compounds; light emitting diodes; semiconductor lasers; wide band gap semiconductors; GaN; Soraa Inc; Sumitomo Electric Inc; green gap; laser diodes; nonpolar emitting devices; nonpolar/semipolar LED; semipolar emitting devices; semipolar plain; violet color region; wavelength 516 nm; wavelength 520 nm to 530 nm; yellow color region; Radiative recombination;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference (DRC), 2011 69th Annual
Conference_Location
Santa Barbara, CA
ISSN
1548-3770
Print_ISBN
978-1-61284-243-1
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2011.5994487
Filename
5994487
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