DocumentCode :
2903706
Title :
Self-aligned InAs/Al0.45Ga0.55Sb vertical tunnel FETs
Author :
Zhou, Guangle ; Lu, Y. ; Li, R. ; Zhang, Q. ; Hwang, W. ; Liu, Q. ; Vasen, T. ; Zhu, H. ; Kuo, J. ; Koswatta, S. ; Kosel, T. ; Wistey, M. ; Fay, P. ; Seabaugh, A. ; Xing, Huili
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
fYear :
2011
fDate :
20-22 June 2011
Firstpage :
205
Lastpage :
206
Abstract :
In this paper, the authors report the first demonstration of an InAs/Al0.45Ga0.55Sb heterojunction TFETs fabricated using an optical-lithography-only, self-aligned process and also investigate the effects limiting the InAs/Al0.45Ga0.55Sb TFET performance.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; indium compounds; photolithography; tunnel transistors; InAs-Al0.45Ga0.55Sb; heterojunction TFET; optical lithography; self-aligned process; tunnel field-effect transistors; vertical tunnel FET; Atomic layer deposition;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
ISSN :
1548-3770
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2011.5994499
Filename :
5994499
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2903706
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