DocumentCode :
2903789
Title :
N-Polar AlGaN/GaN MIS-HEMTs on SiC with a 16.7 W/mm power density at 10 GHz using an Al2O3 based etch stop technology for the gate recess
Author :
Kolluri, Seshadri ; Keller, Stacia ; DenBaars, Steven P. ; Mishra, Umesh K.
Author_Institution :
Dept. of ECE, Univ. of California, Santa Barbara, CA, USA
fYear :
2011
fDate :
20-22 June 2011
Firstpage :
215
Lastpage :
216
Abstract :
This paper presents the X-band and C-band power performance of MOCVD grown N-polar AlGaN/GaN MIS-HEMTs grown on semi-insulating SiC substrates. Additionally, an AI2O3 based etch stop technology was demonstrated for improving the manufacturability of N-polar GaN HEMTs with SixNy passivation. The reported output power densities of 16.7 W/mm at 10 GHz and 20.7 W/mm at 4 GHz represent the highest reported values so far for an N-polar device, at both of these frequencies.
Keywords :
III-V semiconductors; MIS devices; MOCVD; aluminium compounds; gallium compounds; high electron mobility transistors; silicon compounds; wide band gap semiconductors; AlGaN-GaN; MOCVD; N-polar MIS-HEMT; SiC; etch stop technology; frequency 10 GHz; gate recess; semi-insulating substrates; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
ISSN :
1548-3770
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2011.5994504
Filename :
5994504
Link To Document :
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