Title :
Total GaN solution to electrical power conversion
Author :
Wu, Y.F. ; Coffie, R. ; Fichtenbaum, N. ; Dora, Y. ; Suh, C.-S. ; Shen, L. ; Parikh, P. ; Mishra, U.K.
Author_Institution :
Transphorm Inc., Goleta, CA, USA
Abstract :
We present the first 600V-class, total GaN solution for electrical power conversion applications. A 220V-400V boost converter using a GaN transistor and a GaN diode with fast & clean hard-switched waveforms has been demonstrated. The conversion efficiency was >;99.1% at 100 kHz and >;98.2% at 800 kHz.
Keywords :
III-V semiconductors; Schottky diodes; gallium compounds; high electron mobility transistors; power convertors; wide band gap semiconductors; GaN; GaN diode; GaN transistor; boost converter; electrical power conversion; frequency 100 kHz; frequency 800 kHz; hard-switched waveforms; total GaN solution; voltage 200 V to 400 V; voltage 600 V; Electricity; Frequency conversion; Gallium nitride; HEMTs;
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2011.5994505
