Title :
Investigation on SnS film by RF sputtering for photovoltaic application
Author :
Guang-Pu, Wei ; Zhi-Lin, Zhang ; Wei-Ming, Zhao ; Xiang-Hong, Gao ; Wei-Qun, Chen ; Tanamura, Hiromasa ; Yamaguchi, Masaki ; Noguchi, Hidenori ; Nagatomo, Takao ; Omoto, Osamu
Author_Institution :
Shanghai Univ. of Sci. & Technol., China
Abstract :
Tin sulfide (SnS) solar cell semiconductor thin films were prepared by an RF sputtering method. The component, crystal structure, optical properties and electrical properties of SnS films were measured. The relationship between the SnS films properties and the sputtering condition was discussed. Using Sb as a dopant and combining thermal annealing at elevated temperatures (about 400°C), n-type SnS homojunction solar cell thin films were obtained
Keywords :
annealing; antimony; p-n junctions; semiconductor device testing; semiconductor doping; semiconductor thin films; solar cells; sputter deposition; sputtered coatings; tin compounds; RF sputtering; SnS:Sb; crystal structure; dopant; electrical properties; optical properties; p-n homojunction; photovoltaic application; solar cells; sputtering condition; thermal annealing; thin film semiconductor; Optical devices; Optical films; Photovoltaic cells; Photovoltaic systems; Radio frequency; Semiconductor films; Semiconductor thin films; Solar power generation; Sputtering; Tin;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519977
