Electrical pumped integrated III/V laser lattice-matched to a Silicon substrate

In this paper we also discuss the latest achievement in the development and improvement of electrically injected Ga(NAsP) laser diodes lattice matched to (001) Si. In particular, the conductivity of the cladding layers has been optimized to reduce the voltage drop across the device hetero-structures. While these first laser diodes have been deposited on 2 inch Si wafer in a horizontal MOVPE reactor, the current research activity concentrates on the process transfer to 300 mm Si wafers in a production epitaxy system. The challenges and opportunities of growing GaP based materials on 300 mm substrates in a Close-Couple-Showerhead cluster tool as well as the final device concept will be discussed in view of CMOS capability and industrial process optimisation.