Electrical pumped integrated III/V laser lattice-matched to a Silicon substrate

Author

Kunert, B. ; Liebich, S. ; Zimprich, M. ; Beyer, A. ; Ziegler, S. ; Volz, K. ; Stolz, W. ; Hossain, N. ; Jin, S.R. ; Sweeney, S.J.

Author_Institution

NAsP III/V GmbH, Marburg, Germany

fYear

2011

fDate

20-22 June 2011

Firstpage

257

Lastpage

258

Abstract

In this paper we also discuss the latest achievement in the development and improvement of electrically injected Ga(NAsP) laser diodes lattice matched to (001) Si. In particular, the conductivity of the cladding layers has been optimized to reduce the voltage drop across the device hetero-structures. While these first laser diodes have been deposited on 2 inch Si wafer in a horizontal MOVPE reactor, the current research activity concentrates on the process transfer to 300 mm Si wafers in a production epitaxy system. The challenges and opportunities of growing GaP based materials on 300 mm substrates in a Close-Couple-Showerhead cluster tool as well as the final device concept will be discussed in view of CMOS capability and industrial process optimisation.

Keywords

CMOS integrated circuits; III-V semiconductors; MOCVD; electrical conductivity; gallium compounds; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; (001) Si; CMOS capability; GaNAsP; GaP based materials; Si; Si wafer; cladding layer conductivity; close-couple-showerhead cluster tool; device heterostructures; electrical pumped integrated III-V laser; electrically injected Ga(NAsP) laser diodes; horizontal MOVPE reactor; industrial process optimisation; lattice-matching; process transfer; production epitaxy system; silicon substrate; voltage drop; CMOS integrated circuits; Lasers; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2011 69th Annual

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-61284-243-1

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2011.5994521

Filename

5994521