Lateral carrier injection with n-type modulation-doped quantum wells in VCSELs

Author

Lin, Chin-Han ; Zheng, Yan ; Gross, Matthias ; Rodwell, Mark J.W. ; Coldren, Larry A.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA

fYear

2011

fDate

20-22 June 2011

Firstpage

259

Lastpage

260

Abstract

We have demonstrated a novel Field-Induced Charge-Separation Laser (FICSL) in a Vertical-Cavity Surface-Emitting Laser (VCSEL) embodiment. In addition to the initial optical modulation results that have been presented, we here for the first time present details on the novel lateral charge injection structure as well as the advanced bandgap engineering involved in the gate structure. These features together permit high-speed light modulation with a nearly constant injection current. The result is an entirely new concept for high-speed directly-modulated semiconductor lasers.

Keywords

charge injection; energy gap; laser cavity resonators; optical modulation; quantum well lasers; surface emitting lasers; VCSEL; advanced bandgap engineering; field-induced charge-separation laser; gate structure; high-speed directly-modulated semiconductor lasers; high-speed light modulation; injection current; lateral carrier injection; n-type modulation-doped quantum wells; optical modulation; vertical-cavity surface-emitting laser embodiment; Logic gates; Planarization;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2011 69th Annual

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-61284-243-1

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2011.5994522

Filename

5994522