• DocumentCode
    2904136
  • Title

    Effects of Cu Addition on Growth of Au-Sn Intermetallics at Sn-xCu/Au Interface during Aging Process

  • Author

    Tian, Yanhong ; Wang, Chunqing ; Liu, Wei ; Chen, Yarong

  • Author_Institution
    Harbin Inst. of Technol., Harbin
  • fYear
    2007
  • fDate
    14-17 Aug. 2007
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    The growth of Au-Sn intermetallic compounds (IMCs) is a major concern to the reliability of solder joints in microelectronic, optoelectronic and micro-electronic-mechanical system (MEMS) which has a layer of Au metallization on the surface of components or leads. This paper presents the growth behavior of Au-Sn IMCs at interfaces of Au metallization and Sn-based solder joints with the addition Cu alloying element during aging process. The coefficients of the Au-Sn IMCs growth were calculated. Results on the interfacial reaction between Sn-xCu solders and Au metallization during aging process show that three thick layers of Au-Sn IMCs including AuSn. AuSn2 and AuSn4 formed at the interface region. The thickness of each Au-Sn IMC layer vs square root of aging time followed linear relationship. Calculation of the IMC growth coefficients show that the diffusion coefficients decrease with the addition Cu elements, which indicates that Cu addition suppresses the growth of Au-Sn IMCs layer.
  • Keywords
    ageing; alloying; copper alloys; gold alloys; metallisation; solders; tin alloys; Au metallization; Au-Sn intermetallic growth; Cu addition; Cu alloying element; Sn-based solder joints; SnCu-Au; aging process; aging time; diffusion coefficients; growth behavior; interface region; interfacial reaction; intermetallic compounds; micro-electronic-mechanical system; solder joint reliability; Aging; Gold; Intermetallic; Lead; Metallization; Microelectronics; Micromechanical devices; Production systems; Soldering; Welding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology, 2007. ICEPT 2007. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1392-8
  • Electronic_ISBN
    978-1-4244-1392-8
  • Type

    conf

  • DOI
    10.1109/ICEPT.2007.4441457
  • Filename
    4441457