Title :
Near UV AlGaN-cladding free nonpolar InGaN/GaN laser diodes
Author :
Haeger, Daniel A. ; Holder, Casey ; Farrell, Robert M. ; Hsu, Po Shan ; Kelchner, Kathryn M. ; Fujito, Kenji ; Cohen, Daniel A. ; DenBaars, Steven P. ; Speck, James S. ; Nakamura, Shuji
Author_Institution :
Mater. Dept., Univ. of California, Santa Barbara, CA, USA
Abstract :
We have previously demonstrated the AlGaN-cladding-free (ACF) laser diode (LD) concept over a wide visible spectral range and various nonpolar/semipolar crystallographic orientations. The benefits of this ACF epitaxial design include lower operating voltages and higher production yields. Nonpolar LDs have been demonstrated out to 500nm1 with semipolar reaching as long as 534nm2. No results have been published on nonpolar/semipolar orientations for short wavelength LDs. In this paper we report on the short wavelength limits of this epitaxial design on nonpolar bulk m-plane GaN substrates.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; integrated optics; optical design techniques; quantum well lasers; semiconductor epitaxial layers; ultraviolet spectra; wide band gap semiconductors; AlGaN-GaN; GaN; epitaxial design; near UV-cladding free nonpolar laser diodes; nonpolar bulk m-plane substrates; nonpolar-semipolar crystallographic orientations; visible spectra; Optical variables measurement; Substrates;
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2011.5994523
