RIE lag directional coupler based integrated InGaAsP/InP ring mode-locked laser

Author

Parker, John S. ; Binetti, Pietro R A ; Hung, Yung-Jr ; Norberg, Erik J. ; Coldren, Larry A.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA

fYear

2011

fDate

20-22 June 2011

Firstpage

263

Lastpage

264

Abstract

We have demonstrated the first integrated ring mode-locked laser (MLL) with a reactive ion etch (RIE) lag coupler. The RIE lag directional coupler (RL-DC) is highly advantageous for integrated MLLs as it has an insertion loss <;1 dB and can be designed to provide any coupling value. This provides the RL-DC with a much needed flexibility in large photonic systems unlike standard multimode interference (MMI) couplers, which typically provide only 3 dB power splitting.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; laser mode locking; optical design techniques; optical directional couplers; optical losses; quantum well lasers; ring lasers; sputter etching; InGaAsP-InP; insertion loss; integrated ring mode-locked laser; photonic systems; power splitting; reactive ion etch lag directional coupler; standard multimode interference couplers; Couplers; Integrated optics; Optical imaging; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2011 69th Annual

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-61284-243-1

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2011.5994524

Filename

5994524