Integrated non-III-nitride/III-nitride tandem solar cell

Author

Toledo, Nikholas G. ; Cruz, Samantha C. ; Neufeld, Carl J. ; Lang, Jordan R. ; Scarpulla, Michael A. ; Bueh, Trevor ; Gossard, Arthur C. ; DenBaars, Steven P. ; Speck, James S. ; Mishra, Umesh K.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA

fYear

2011

fDate

20-22 June 2011

Firstpage

265

Lastpage

266

Abstract

III-nitrides have recently been demonstrated as potential photovoltaic device material particularly in the high-energy portion of the solar spectrum. The large lattice mismatch between InN and GaN however, makes it difficult to grow good quality high In-composition InGaN films for low bandgap subcells. The integration of III-N based solar cells, which have currently been demonstrated to work well above 2.0 eV, with mature IV and III-V based solar cell technologies, which work well at bandgaps ≤ 2.0 eV, has the potential to improve the efficiency of current multi-junction solar cells. In this paper, we present the first on-wafer integration of InGaN/GaN solar cells with non-III-nitride (GaAs) solar cells.

Keywords

gallium compounds; nitrogen compounds; photovoltaic cells; solar cells; GaN; III-nitride tandem solar cell; InN; low bandgap subcells; on-wafer integration; photovoltaic device material; solar cell technologies; solar spectrum; Gallium nitride; Indium tin oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2011 69th Annual

Conference_Location

Santa Barbara, CA

ISSN

1548-3770

Print_ISBN

978-1-61284-243-1

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2011.5994525

Filename

5994525