• DocumentCode
    2904253
  • Title

    N-polar GaN HEMTs with fmax > 300 GHz using high-aspect-ratio T-gate design

  • Author

    Denninghoff, D.J. ; Dasgupta, S. ; Brown, D.F. ; Keller, S. ; Speck, J. ; Mishra, U.K.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
  • fYear
    2011
  • fDate
    20-22 June 2011
  • Firstpage
    269
  • Lastpage
    270
  • Abstract
    In this paper, we report measured fmax data of over 300 GHz on an MOCVD-grown N-polar GaN HEMT using a high-aspect-ratio T-gate. To our knowledge, this >; 300-GHz fmax value is the highest reported to date for N-polar GaN HEMTs and is 50% higher than the previously reported value (Nidhi et al., 2010).
  • Keywords
    III-V semiconductors; MOCVD; gallium compounds; high electron mobility transistors; GaN; MOCVD-grown N-polar GaN HEMT; high-aspect-ratio T-gate design; Epitaxial growth; Gallium nitride; Logic gates; MOCVD; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2011 69th Annual
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-61284-243-1
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2011.5994527
  • Filename
    5994527
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2904253