Title :
Device scaling technologies for ultra-high-speed GaN-HEMTs
Author :
Shinohara, K. ; Regan, D. ; Milosavljevic, I. ; Corrion, A.L. ; Brown, D.F. ; Burnham, S. ; Willadsen, P.J. ; Butler, C. ; Schmitz, A. ; Kim, S. ; Lee, V. ; Ohoka, A. ; Asbeck, P.M. ; Micovic, M.
Author_Institution :
HRL Labs. LLC, Malibu, CA, USA
Abstract :
The high frequency performance of GaN-based HEMTs has been significantly improved through innovative device scaling technologies such as AlGaN or InGaN back barriers, thin AlN top barriers, lattice-matched InAlN barriers, ultra-short gates, and self-aligned gates. In this paper, we review our scaling technologies for ultra-high-speed operation of GaN-HEMTs, which provide not only high yield and uniformity but also a large-scale integration of E/D-mode HEMTs for future RF and mixed-signal applications.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; large scale integration; wide band gap semiconductors; GaN; device scaling technologies; large-scale integration; lattice-matched barriers; mixed-signal applications; ultrahigh-speed HEMT; DH-HEMTs; Gallium nitride; Logic gates;
Conference_Titel :
Device Research Conference (DRC), 2011 69th Annual
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-61284-243-1
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2011.5994530
