Trap-related delay analysis of self-aligned N-polar GaN/InAlN HEMTs with record extrinsic gm of 1105 mS/mm

Ga-polar InAlN-based charge-inducing barrier for HEMTs have been recently demonstrated as a viable technology for high frequency applications due to high polarization charge and hence, low resistance channels. In this paper, we report on MBE-grown N-polar GaN/InAlN HEMTs with excellent DC and RF performance. There exists a discrepancy in the DC and RF data for N-polar MBE InAlN devices which is explained through several measurements and analysis and possible solutions are discussed.