DocumentCode :
2904343
Title :
Laser micromachining of silicon in sulfur hexafluoride atmosphere: experiment and numerical simulation
Author :
Yashkir, Yuri M. ; Lee, Seongkuk ; Harb, Maher ; Yashkir, Yuriy Yu
Author_Institution :
Toronto Univ., Ont.
fYear :
2005
fDate :
17-17 June 2005
Firstpage :
665
Lastpage :
665
Abstract :
Micromachining conditions for silicon using a CW lasers and different gas ambients were reported. We report results of experimental investigation of the etch rate of silicon using a CW 532 nm laser in sulfur hexafluoride atmosphere, and three-dimensional temporal computer modeling of the process
Keywords :
laser beam etching; laser beam machining; micromachining; numerical analysis; silicon; sulphur compounds; 532 nm; CW lasers; SF6; Si; etch rate; gas ambients; laser micromachining; numerical simulation; silicon; sulfur hexafluoride atmosphere; three-dimensional temporal computer modeling; Atmosphere; Chemical lasers; Etching; Laser modes; Micromachining; Numerical simulation; Optical materials; Power lasers; Silicon; Sulfur hexafluoride;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Conference_Location :
Munich
Print_ISBN :
0-7803-8974-3
Type :
conf
DOI :
10.1109/CLEOE.2005.1568441
Filename :
1568441
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2904343
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