• DocumentCode
    2904343
  • Title

    Laser micromachining of silicon in sulfur hexafluoride atmosphere: experiment and numerical simulation

  • Author

    Yashkir, Yuri M. ; Lee, Seongkuk ; Harb, Maher ; Yashkir, Yuriy Yu

  • Author_Institution
    Toronto Univ., Ont.
  • fYear
    2005
  • fDate
    17-17 June 2005
  • Firstpage
    665
  • Lastpage
    665
  • Abstract
    Micromachining conditions for silicon using a CW lasers and different gas ambients were reported. We report results of experimental investigation of the etch rate of silicon using a CW 532 nm laser in sulfur hexafluoride atmosphere, and three-dimensional temporal computer modeling of the process
  • Keywords
    laser beam etching; laser beam machining; micromachining; numerical analysis; silicon; sulphur compounds; 532 nm; CW lasers; SF6; Si; etch rate; gas ambients; laser micromachining; numerical simulation; silicon; sulfur hexafluoride atmosphere; three-dimensional temporal computer modeling; Atmosphere; Chemical lasers; Etching; Laser modes; Micromachining; Numerical simulation; Optical materials; Power lasers; Silicon; Sulfur hexafluoride;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
  • Conference_Location
    Munich
  • Print_ISBN
    0-7803-8974-3
  • Type

    conf

  • DOI
    10.1109/CLEOE.2005.1568441
  • Filename
    1568441
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2904343