• DocumentCode
    2904438
  • Title

    Single-Wafer Pressure Capacitive Sensor

  • Author

    Bolea, R.G. ; Luque, A. ; Quero, J.M.

  • Author_Institution
    Dpto de Ingenierfa Electronica, Univ. de Sevilla
  • fYear
    2007
  • fDate
    27-30 May 2007
  • Firstpage
    3315
  • Lastpage
    3318
  • Abstract
    A novel manufacturing process for pressure sensor without the need of wafer bonding is presented. Its main advantages are a simple fabrication process and an efficient integr ability with other devices. The sensor is composed of a polysilicon membrane that deflects due to the pressure difference applied over it. Two operation regions are observed: a non-linear sensitivity region at low pressure (0-30 kPa) and a linear one (30-200 kPa) in touch mode. A capacitance-to-frequency conversion circuitry is designed and validated to provide a sensitive sensing module. Experimental results show a sensitivity of 28.7 fF/kPa and of 13.93 Hz/kPa in the nonlinear region. Among the most significant features of this device are versatility, high reliability, integrability and high sensivity.
  • Keywords
    manufacturing processes; pressure sensors; 0 to 30 kPa; 30 to 200 kPa; capacitance-to-frequency conversion circuitry; manufacturing process; nonlinear sensitivity region; polysilicon membrane; pressure capacitive sensor; simple fabrication process; touch mode; Biological materials; Biomembranes; Capacitance; Capacitive sensors; Capacitors; Electrodes; Etching; Fabrication; Orifices; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
  • Conference_Location
    New Orleans, LA
  • Print_ISBN
    1-4244-0920-9
  • Electronic_ISBN
    1-4244-0921-7
  • Type

    conf

  • DOI
    10.1109/ISCAS.2007.378220
  • Filename
    4253388