DocumentCode
2904438
Title
Single-Wafer Pressure Capacitive Sensor
Author
Bolea, R.G. ; Luque, A. ; Quero, J.M.
Author_Institution
Dpto de Ingenierfa Electronica, Univ. de Sevilla
fYear
2007
fDate
27-30 May 2007
Firstpage
3315
Lastpage
3318
Abstract
A novel manufacturing process for pressure sensor without the need of wafer bonding is presented. Its main advantages are a simple fabrication process and an efficient integr ability with other devices. The sensor is composed of a polysilicon membrane that deflects due to the pressure difference applied over it. Two operation regions are observed: a non-linear sensitivity region at low pressure (0-30 kPa) and a linear one (30-200 kPa) in touch mode. A capacitance-to-frequency conversion circuitry is designed and validated to provide a sensitive sensing module. Experimental results show a sensitivity of 28.7 fF/kPa and of 13.93 Hz/kPa in the nonlinear region. Among the most significant features of this device are versatility, high reliability, integrability and high sensivity.
Keywords
manufacturing processes; pressure sensors; 0 to 30 kPa; 30 to 200 kPa; capacitance-to-frequency conversion circuitry; manufacturing process; nonlinear sensitivity region; polysilicon membrane; pressure capacitive sensor; simple fabrication process; touch mode; Biological materials; Biomembranes; Capacitance; Capacitive sensors; Capacitors; Electrodes; Etching; Fabrication; Orifices; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location
New Orleans, LA
Print_ISBN
1-4244-0920-9
Electronic_ISBN
1-4244-0921-7
Type
conf
DOI
10.1109/ISCAS.2007.378220
Filename
4253388
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