DocumentCode
2904453
Title
An analytical model for the calculation of the Expected Miss Ratio in faulty caches
Author
Sánchez, Daniel ; Sazeides, Yiannakis ; Aragón, Juan L. ; García, José M.
Author_Institution
Dept. of Comput. Eng., Univ. of Murcia, Murcia, Spain
fYear
2011
fDate
13-15 July 2011
Firstpage
252
Lastpage
257
Abstract
Technology scaling improvement is affecting the reliability of ICs due to increases in static and dynamic variations as well as wear-out failures. This is particularly true for caches that dominate the area of modern processors and are built with minimum-sized, but prone to failure, SRAM cells. Our attempt to address this cache reliability challenge is an analytical model for determining the implications on cache miss-rate of block-disabling due to random cell failure. The proposed model is distinct from previous work in that is an exact model rather than an approximation and yet it is simpler than previous work. Its simplicity stems from the lack of fault-maps in the analysis. The model capabilities are illustrated through a study of cache miss-rate trends in future technology nodes. The model is also used to determine the accuracy of a random fault map methodology. The analysis reveals, for the assumptions, programs and cache configuration used in this study, a surprising result: a relative small number of random fault maps, 100-1000, is sufficient to obtain accurate mean and standard-deviation values for the miss-rate. Additional investigation revealed that the cause of this behavior is a high correlation between the number of accesses and access distribution between cache sets.
Keywords
SRAM chips; integrated circuit reliability; IC reliability; SRAM cells; expected miss ratio calculation; faulty caches; random fault map methodology; Analytical models; Benchmark testing; Circuit faults; Correlation; Error correction codes; Probability distribution; Reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
On-Line Testing Symposium (IOLTS), 2011 IEEE 17th International
Conference_Location
Athens
Print_ISBN
978-1-4577-1053-7
Type
conf
DOI
10.1109/IOLTS.2011.5994538
Filename
5994538
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