Title :
Study the Effects of the Doped-B Atom on Silicon Nanodot
Author :
Wang, Z.O. ; Mao, L.F.
Author_Institution :
Soochow Univ., Suzhou
Abstract :
Based on the first principles calculations, the effects of the doped-B atom on the electrical conductance of silicon nanodots device has been studied. The results show that the doped-B atom existing in the quantum dot will shift the peak of transmission coefficient and result in a small change of peak value. And thus it will deteriorate the electronic conductance for low bias voltage.
Keywords :
boron; electrical conductivity; elemental semiconductors; semiconductor quantum dots; silicon; Si; doped-B atom; electrical conductance; quantum dot; silicon nanodot device; Density functional theory; Electrodes; Flash memory; Gold; Low voltage; MOSFET circuits; Nanoscale devices; Quantum dots; Semiconductor devices; Silicon; dope; electrical conductance; nanodot;
Conference_Titel :
Electronic Packaging Technology, 2007. ICEPT 2007. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1392-8
Electronic_ISBN :
978-1-4244-1392-8
DOI :
10.1109/ICEPT.2007.4441479
