DocumentCode
2904516
Title
Study the Effects of the Doped-B Atom on Silicon Nanodot
Author
Wang, Z.O. ; Mao, L.F.
Author_Institution
Soochow Univ., Suzhou
fYear
2007
fDate
14-17 Aug. 2007
Firstpage
1
Lastpage
3
Abstract
Based on the first principles calculations, the effects of the doped-B atom on the electrical conductance of silicon nanodots device has been studied. The results show that the doped-B atom existing in the quantum dot will shift the peak of transmission coefficient and result in a small change of peak value. And thus it will deteriorate the electronic conductance for low bias voltage.
Keywords
boron; electrical conductivity; elemental semiconductors; semiconductor quantum dots; silicon; Si; doped-B atom; electrical conductance; quantum dot; silicon nanodot device; Density functional theory; Electrodes; Flash memory; Gold; Low voltage; MOSFET circuits; Nanoscale devices; Quantum dots; Semiconductor devices; Silicon; dope; electrical conductance; nanodot;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology, 2007. ICEPT 2007. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-1392-8
Electronic_ISBN
978-1-4244-1392-8
Type
conf
DOI
10.1109/ICEPT.2007.4441479
Filename
4441479
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