Title :
Front-end performance and charge collection properties of heavily irradiated DNW MAPS
Author :
Ratti, Lodovico ; Dellagiovanna, Marco ; Manghisoni, Massimo ; Re, Valerio ; Traversi, Gianluca ; Zucca, Stefano ; Bettarini, Stefano ; Morsani, Fabio ; Rizzo, Giuliana
Author_Institution :
Dipt. di Elettron., Univ. degli Studi di Pavia, Pavia, Italy
Abstract :
Deep N-well (DNW) CMOS monolithic active pixel sensors (MAPS) fabricated in a 130 nm technology have been exposed to γ-rays up to an integrated dose of about 10 Mrad and subjected to a 100 °C/168 h annealing cycle. Device tolerance to total ionizing dose has been evaluated by monitoring the change in charge sensitivity, noise and charge collection properties after each step of the irradiation and annealing campaign. Damage mechanisms and their relation to front-end architecture and sensor features are thoroughly discussed by comparing the response to ionizing radiation of different test structures and based on radiation induced degradation models in single MOS transistors.
Keywords :
CMOS image sensors; MOSFET; annealing; gamma-ray effects; semiconductor counters; semiconductor device noise; γ-rays; annealing campaign; annealing cycle; change monitoring; charge collection property; charge sensitivity; damage mechanisms; deep N-well CMOS monolithic active pixel sensors; device tolerance; front-end architecture; front-end performance; heavily irradiated DNW MAPS; integrated dose; ionizing radiation; irradiation; noise; radiation induced degradation models; sensor features; single MOS transistors; size 130 nm; temperature 100 C; time 168 h; total ionizing dose; Annealing; Capacitance; Leakage current; Noise; Radiation effects; Sensitivity; Transistors; CMOS; MAPS; analog front-end; deep N-well; ionizing radiation;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2009.5994549
