Current — Voltage characterization of SHI irradiated silicon bipolar power transistor

Author

Dinesh, C.M. ; Ramani ; Radhakrishna, M.C. ; Madhu, K.V. ; Jayashree, B. ; Khan, S.A. ; Kanjilal, D.

Author_Institution

Dept. of Phys., Bangalore Univ., Bangalore, India

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

73

Lastpage

77

Abstract

60 MeV boron ion energy transfer in Si power BJT´s for the interface charge state density is studied. LET, total ionizing dose and total displacement damage dose are correlated with the observed post-irradiated electrical characteristics.

Keywords

boron; elemental semiconductors; power bipolar transistors; radiation hardening (electronics); silicon; LET; SHI irradiated silicon bipolar power transistor; Si; bipolar junction transistor; boron ion energy transfer; current-voltage characterization; displacement damage dose; electron volt energy 60 MeV; interface charge state density; linear energy transfer; post-irradiated electrical characteristic; power BJT; total ionizing dose; Boron; Degradation; Energy loss; Ions; Radiation effects; Silicon; Transistors; Displacement Damage; Linear Energy Transfer; Radiation Hardness; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on

Conference_Location

Bruges

ISSN

0379-6566

Print_ISBN

978-1-4577-0492-5

Electronic_ISBN

0379-6566

Type

conf

DOI

10.1109/RADECS.2009.5994556

Filename

5994556