Title :
Pure SH SAW on single crystal KNbO3 for liquid sensor applications
Author :
Pollard, T.B. ; Vetelino, J.F. ; Da Cunha, M. Pereira
Author_Institution :
Dept. of Electr. & Comput. Eng., Maine Univ., Orono, ME, USA
Abstract :
This paper reports on the design, fabrication, and testing of a surface acoustic wave (SAW) delay line on single crystal KNbO3 Euler angles (0°,90°, 0°). This particular orientation of KNbO3 is of symmetry Type 4, which is known to support an electromechanically active shear horizontal (SH) SAW mode, and has a very large electromechanical coupling coefficient of 53%. The SH-SAW mode is especially attractive for liquid sensing applications because the SAW is not significantly attenuated by the adjacent aqueous media, unlike that of a generalized SAW (GSAW), which contains particle displacement normal to the surface. 100 MHz SH-SAW delay line devices with 20% bandwidths were fabricated. Experimental results are reported relevant to liquid sensing applications, such as the electromechanical coupling coefficient, K2, Δf/f0 versus temperature, and the attenuation effect on the magnitude of the transmission coefficient, |S21|, with and without de-ionized (DI) water loaded surface. Results show a difference of only about 2 dB in |S21| when the surface is loaded with DI water, thus verifying the suitability of the pure SH-SHAW mode on KNbO3 for liquid sensor applications.
Keywords :
potassium compounds; surface acoustic wave delay lines; surface acoustic wave sensors; 100 MHz; DI water; Euler angles; KNbO3; SAW delay line; SH SAW; aqueous media; attenuation effect; delay line devices; electromechanical coupling coefficient; liquid sensor applications; loaded surface; particle displacement; shear horizontal; single crystal; surface acoustic wave; symmetry Type 4; transmission coefficient; Acoustic sensors; Acoustic waves; Acoustical engineering; Application software; Attenuation; Delay lines; Fabrication; Surface acoustic waves; Surface waves; Temperature;
Conference_Titel :
Ultrasonics, 2003 IEEE Symposium on
Print_ISBN :
0-7803-7922-5
DOI :
10.1109/ULTSYM.2003.1293098