Total dose effect on the propagation of single event transients in a CMOS inverter string

Author

Buchner, Stephen ; Sibley, Michael ; Eaton, Paul ; Mavis, David ; McMorrow, Dale

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

79

Lastpage

82

Abstract

In this work we focus on the effects of TID on the propagation of SETs in a string of inverters manufactured using bulk CMOS (180 nm) technology. Specifically, we have used a pulsed laser to measure the widths of the transients prior to and following exposure to ionizing radiation. This approach is similar to that previously used to investigate SETs in combinational and sequential logic. Depending on the conditions under which the radiation exposures occurred, some of the SETs exhibited enhanced broadening while others contracted.

Keywords

CMOS logic circuits; combinational circuits; logic gates; sequential circuits; CMOS inverter string; bulk CMOS technology; combinational logic; ionizing radiation; pulsed laser; sequential logic; single event transient propagation; size 180 nm; total dose effect; total ionizing dose; width measurement; CMOS integrated circuits; Inverters; Ionizing radiation; Latches; Logic gates; Transient analysis; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on

Conference_Location

Bruges

ISSN

0379-6566

Print_ISBN

978-1-4577-0492-5

Electronic_ISBN

0379-6566

Type

conf

DOI

10.1109/RADECS.2009.5994557

Filename

5994557