• DocumentCode
    2904820
  • Title

    Large SET broadening in a fully-depleted SOI technology — Mitigation with body contacts

  • Author

    Ferlet-Cavrois, V. ; Kobayashi, D. ; McMorrow, D. ; Schwank, J.R. ; Ikeda, H. ; Gaillardin, M. ; Flament, O. ; Hirose, K.

  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    83
  • Lastpage
    86
  • Abstract
    Large SET broadening effects are shown in fully-depleted SOI inverter chains using laser irradiation. These broadening effects are due to significant floating-body effects in single transistors. Designing with body contacts can efficiently suppress these effects.
  • Keywords
    elemental semiconductors; invertors; laser beam effects; silicon; silicon-on-insulator; transients; transistors; Si; body contact mitigation; floating-body effect; fully-depleted SOI inverter chain technology; large SET broadening effect; large single event transient broadening; laser irradiation; transistors; Inverters; Logic gates; Measurement by laser beam; Radiation effects; Silicon; Transient analysis; Transistors; Propagation induced broadening; Single Event Transient; body contacts; floating body effect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
  • Conference_Location
    Bruges
  • ISSN
    0379-6566
  • Print_ISBN
    978-1-4577-0492-5
  • Electronic_ISBN
    0379-6566
  • Type

    conf

  • DOI
    10.1109/RADECS.2009.5994558
  • Filename
    5994558
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2904820