Title :
Investigation of single event burnout sensitive depth in power MOSFETS
Author :
Darracq, F. ; Pouget, V. ; Lewis, D. ; Fouillat, P. ; Lorfevre, E. ; Ecoffet, R. ; Bezerra, F.
Author_Institution :
IMS, Univ. Bordeaux 1, Talence, France
Abstract :
The depth of the Single-event burnout sensitive volume of power MOSFETs is investigated using TCAD simulation and TPA laser testing approaches.
Keywords :
electronic engineering computing; power MOSFET; technology CAD (electronics); TCAD simulation; TPA laser testing approach; power MOSFET; single-event burnout sensitive volume depth; Computational modeling; Laser beams; Lattices; Logic gates; MOSFETs; Optical beams; Semiconductor process modeling; SEB; TPA laser testing; modeling; power MOSFET;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2009.5994563
