Title :
Annealing of heavy-ion induced floating gate errors: LET and feature size dependence
Author :
Bagatin, Marta ; Gerardin, Simone ; Cellere, Giorgio ; Paccagnella, Alessandro ; Visconti, Angelo ; Beltrami, Silvia ; Bonanomi, Mauro ; Harboe-Sørensen, Reno
Author_Institution :
Dipt. di Ing. dell´´Inf., Univ. di Padova, Padova, Italy
Abstract :
We discuss the room temperature annealing of Floating Gate errors in Flash memories with NAND and NOR architecture after heavy-ion irradiation. We present the evolution of rough bit errors as a function of time after the exposure, examining the annealing dependence on the particle LET, cell feature size, and for Multi Level Cells, on the program level. The results are explained based on the statistical properties of the cell threshold voltage distributions before and after heavy-ion strikes.
Keywords :
NAND circuits; NOR circuits; annealing; flash memories; LET; NAND architecture; NOR architecture; cell feature size; cell threshold voltage distribution; feature size dependence; flash memories; heavy-ion induced floating gate errors; heavy-ion irradiation; heavy-ion strikes; multilevel cells; room temperature annealing; rough bit errors evolution; statistical property; Annealing; Charge carrier processes; Computer architecture; Ions; Microprocessors; Radiation effects; Temperature measurement; Annealing; Flash memories; Heavy ions; Radiation Effects;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2009.5994564
