Title :
A Gallium Arsenide IC Pilot Line
Author :
Strieter, Frederick J.
Author_Institution :
Honeywell, Inc., Optoelectronics Division, 830 East Arapaho Road, Richardson, TX 75081
Abstract :
A gallium arsenide pilot line has been established for the production of depletion-mode MESFET devices. Although the initial emphasis has been directed towards digital ICs, microwave devices can also be built on this line with the addition of submicron lithography. While the initial installed equipment capacity is 100 three inch wafers per week, the facility is sized for over 10 times that level. The pilot line will operate both as a production facility for custom and standard GaAs devices and as a foundry operation.
Keywords :
Foundries; Gallium arsenide; Lithography; Microwave devices; Production facilities;
Conference_Titel :
Military Communications Conference, 1985. MILCOM 1985. IEEE
Conference_Location :
Boston, MA, USA
DOI :
10.1109/MILCOM.1985.4795131
